技术参数

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1200 V
• Current - Continuous Drain (Id) @ 25°C 82A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Rds On (Max) @ Id, Vgs 25.4mOhm @ 27A, 18V
• Vgs(th) (Max) @ Id 5.1V @ 8.6mA
• Gate Charge (Qg) (Max) @ Vgs 63.4 nC @ 18 V
• Vgs (Max) +23V, -7V
• Input Capacitance (Ciss) (Max) @ Vds 2540 pF @ 800 V
• FET Feature -
• Power Dissipation (Max) 405W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package PG-HDSOP-22-3
• Package / Case 22-PowerBSOP Module
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095