技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 1200 V
• Current - Continuous Drain (Id) @ 25°C 56A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
• Rds On (Max) @ Id, Vgs 39.6mOhm @ 17.5A, 18V
• Vgs(th) (Max) @ Id 5.1V @ 5.5mA
• Gate Charge (Qg) (Max) @ Vgs 42.4 nC @ 18 V
• Vgs (Max) +23V, -5V
• Input Capacitance (Ciss) (Max) @ Vds 1660 pF @ 800 V
• FET Feature -
• Power Dissipation (Max) 288W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package PG-HDSOP-22-3
• Package / Case 22-PowerBSOP Module
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095