技术参数

• Part Status Last Time Buy
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 900 V
• Current - Continuous Drain (Id) @ 25°C 4A
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 4Ohm @ 2A, 10V
• Vgs(th) (Max) @ Id 3V @ 1mA
• Vgs (Max) ±30V
• Input Capacitance (Ciss) (Max) @ Vds 740 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 60W (Tc)
• Operating Temperature 150°C
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package LDPAK
• Package / Case SC-83
• RoHS Status ROHS3 Compliant