技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel, Common Source
• FET Feature -
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 20A (Ta)
• Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 10V
• Power - Max 1.6W (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 22-UFBGA, WLCSP
• Supplier Device Package 22-WLCSP (2x2)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095