技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 25 V
• Current - Continuous Drain (Id) @ 25°C 9.9A (Ta), 21A (Tc)
• Rds On (Max) @ Id, Vgs 13mOhm @ 8.5A, 10V
• Vgs(th) (Max) @ Id 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs 10.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 653 pF @ 10 V
• FET Feature -
• Mounting Type Surface Mount
• Supplier Device Package 6-PQFN (2x2)
• Package / Case 6-PowerVDFN
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095