技术参数

• Part Status Obsolete
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature -
• Drain to Source Voltage (Vdss) 33V
• Current - Continuous Drain (Id) @ 25°C 5A
• Rds On (Max) @ Id, Vgs 38mOhm @ 2.5A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 260µA
• Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds 220pF @ 10V
• Power - Max 1W
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case 8-SMD, Flat Leads
• Supplier Device Package WMini8-F1
• RoHS Status RoHS Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095