技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
• Rds On (Max) @ Id, Vgs 110mOhm @ 1A, 4V
• Vgs(th) (Max) @ Id 1.3V @ 1mA
• Vgs (Max) ±10V
• Input Capacitance (Ciss) (Max) @ Vds 290 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 500mW (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SMini3-G1-B
• Package / Case SC-70, SOT-323
• RoHS Status RoHS Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0095