技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 28A (Ta), 105A (Tc)
• Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 4.5V
• Vgs(th) (Max) @ Id 1.1V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3710 pF @ 10 V
• FET Feature -
• Mounting Type Surface Mount
• Supplier Device Package 8-PQFN (5x6)
• Package / Case 8-PowerTDFN
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095