技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 100 V
• Current - Continuous Drain (Id) @ 25°C 42A (Tc)
• Rds On (Max) @ Id, Vgs 14mOhm @ 38A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs 48 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 3980 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 140W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Through Hole
• Supplier Device Package IPAK
• Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095