技术参数

• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 55 V
• Current - Continuous Drain (Id) @ 25°C 3.4A (Ta)
• Rds On (Max) @ Id, Vgs 105mOhm @ 3.4A, 10V
• Vgs(th) (Max) @ Id 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 690 pF @ 25 V
• FET Feature Schottky Diode (Isolated)
• Mounting Type Surface Mount
• Supplier Device Package 8-SO
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095