技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 80 V
• Current - Continuous Drain (Id) @ 25°C 500mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 4Ohm @ 500mA, 10V
• Vgs(th) (Max) @ Id 3.5V @ 1mA
• Vgs (Max) 20V
• Input Capacitance (Ciss) (Max) @ Vds 45 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 1W (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package M-A1
• Package / Case 3-SIP
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095