技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 20V
• Frequency - Transition 650MHz
• Noise Figure (dB Typ @ f) 3.3dB @ 100MHz
• Gain 24dB
• Power - Max 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 65 @ 1mA, 6V
• Current - Collector (Ic) (Max) 15mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case TO-236-3, SC-59, SOT-23-3
• Supplier Device Package Mini3-G1
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0095