技术参数

• Part Status Not For New Designs
• Technology MOSFET (Metal Oxide)
• Configuration 2 N-Channel (Dual)
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 200mA
• Rds On (Max) @ Id, Vgs 2.4Ohm @ 200mA, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 4.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 15pF @ 10V
• Power - Max 300mW
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case SC-74, SOT-457
• Supplier Device Package SMT6
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095