技术参数

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 3A (Ta)
• Rds On (Max) @ Id, Vgs 91mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 5.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 240 pF @ 15 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package TSMT6 (SC-95)
• Package / Case SOT-23-6 Thin, TSOT-23-6
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095