技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature Logic Level Gate
• Drain to Source Voltage (Vdss) 200V
• Current - Continuous Drain (Id) @ 25°C 2A (Ta)
• Rds On (Max) @ Id, Vgs 7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V
• Vgs(th) (Max) @ Id 2V @ 1mA, 2.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs -
• Input Capacitance (Ciss) (Max) @ Vds 110pF @ 25V, 200pF @ 25V
• Power - Max -
• Operating Temperature -55°C ~ 175°C
• Mounting Type Surface Mount
• Package / Case 8-VDFN Exposed Pad
• Supplier Device Package 8-VDFN (6x5)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095