技术参数

• Part Status Obsolete
• Sensing Distance 0.039" (1mm)
• Sensing Method Reflective
• Voltage - Collector Emitter Breakdown (Max) 35 V
• Current - Collector (Ic) (Max) 20 mA
• Current - DC Forward (If) (Max) 50 mA
• Output Type Phototransistor
• Response Time 30µs, 40µs
• Mounting Type Surface Mount
• Package / Case 4-SMD
• Operating Temperature -25°C ~ 85°C
• Moisture Sensitivity Level (MSL) 4 (72 Hours)
• ECCN EAR99
• HTSUS 8541.49.8000