技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 10V
• Frequency - Transition 2.5GHz
• Noise Figure (dB Typ @ f) -
• Gain -
• Power - Max 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 5mA, 4V
• Current - Collector (Ic) (Max) 50mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case TO-236-3, SC-59, SOT-23-3
• Supplier Device Package Mini3-G1
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0075