技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 7V
• Frequency - Transition 4GHz
• Noise Figure (dB Typ @ f) 3.5dB @ 800MHz
• Gain 15dB
• Power - Max 50mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 1mA, 1V
• Current - Collector (Ic) (Max) 10mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case TO-236-3, SC-59, SOT-23-3
• Supplier Device Package Mini3-G1
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0075