技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 10V
• Frequency - Transition 6GHz
• Noise Figure (dB Typ @ f) 1dB ~ 1.7dB @ 800MHz
• Gain 13dB
• Power - Max 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 20mA, 8V
• Current - Collector (Ic) (Max) 80mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case SC-70, SOT-323
• Supplier Device Package SMini3-G1
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0095