技术参数

• Part Status Active
• IGBT Type -
• Configuration Half Bridge
• Voltage - Collector Emitter Breakdown (Max) 6500 V
• Current - Collector (Ic) (Max) 800 A
• Power - Max 8350 W
• Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 400A
• Current - Collector Cutoff (Max) 5 mA
• Input Capacitance (Cies) @ Vce 110 nF @ 25 V
• Input Standard
• NTC Thermistor No
• Operating Temperature -50°C ~ 125°C
• Mounting Type Chassis Mount
• Package / Case Module
• Supplier Device Package Module
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095