技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 1.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Rds On (Max) @ Id, Vgs 180mOhm @ 1.5A, 4.5V
• Vgs(th) (Max) @ Id 1.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 2.5 nC @ 4.5 V
• Vgs (Max) 10V
• Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 10 V
• FET Feature Schottky Diode (Isolated)
• Power Dissipation (Max) 1.25W (Ta)
• Operating Temperature 150°C
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package TSMT5
• Package / Case SOT-23-5 Thin, TSOT-23-5
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095