技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 500 V
• Current - Continuous Drain (Id) @ 25°C 19A (Ta)
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id -
• FET Feature -
• Power Dissipation (Max) 100W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package LPTS
• Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095