技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 15V
• Frequency - Transition 5.5GHz
• Noise Figure (dB Typ @ f) 1.7dB @ 900MHz
• Gain 12.5dB
• Power - Max 2W
• DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 200mA, 8V
• Current - Collector (Ic) (Max) 300mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case TO-261-4, TO-261AA
• Supplier Device Package PG-SOT223-4
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0075