技术参数

• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 2.5A (Ta)
• Rds On (Max) @ Id, Vgs 165mOhm @ 1.5A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 3.4 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 10 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 6-WSOF
• Package / Case 6-SMD, Flat Leads
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.21.0095