- 产品型号 NE3521M04-T2-A
- 品牌 Renesas Electronics Corporation
- RoHS Yes
- 描述 RF MOSFET GAAS HJ-FET 2V
- 分类 射频场效应晶体管,金属氧化物半导体场效应晶体管
-
PDF
- 库存
技术参数
- Part Status Obsolete
- Technology GaAs HJ-FET
- Configuration N-Channel
- Frequency 20GHz
- Gain 11dB
- Voltage - Test 2 V
- Current Rating (Amps) 70mA
- Noise Figure 0.85dB
- Current - Test 6 mA
- Power - Output -
- Voltage - Rated 4 V
- Package / Case 4-SMD, Flat Leads
- RoHS Status Not applicable
- ECCN EAR99
- HTSUS 8541.21.0075


