技术参数

• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 14A (Ta)
• Rds On (Max) @ Id, Vgs 7mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 2W (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-PSOP
• Package / Case 8-SOIC (0.173", 4.40mm Width)
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095