技术参数

• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 100mA (Ta)
• Rds On (Max) @ Id, Vgs 25Ohm @ 10mA, 4V
• Vgs(th) (Max) @ Id 2.3V @ 10µA
• Input Capacitance (Ciss) (Max) @ Vds 16 pF @ 5 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SC-75-3, USM
• Package / Case SC-75, SOT-416
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.21.0095