技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 11A (Ta)
• Rds On (Max) @ Id, Vgs 11.7mOhm @ 5.5A, 10V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 6.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) -
• Operating Temperature -
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-SOP
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095