技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 100 V
• Current - Continuous Drain (Id) @ 25°C 21A (Tc)
• Rds On (Max) @ Id, Vgs 85mOhm @ 13A, 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-220AB
• Package / Case TO-220-3
• RoHS Status RoHS non-compliant
• ECCN EAR99
• HTSUS 8541.29.0095