技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 60 V
• Current - Continuous Drain (Id) @ 25°C 30A (Ta)
• Rds On (Max) @ Id, Vgs 36mOhm @ 15A, 4.5V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 29.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1380 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 2W (Ta), 20W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-220
• Package / Case TO-220-3 Isolated Tab
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.29.0095