技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 150 V
• Current - Continuous Drain (Id) @ 25°C 1A (Ta)
• Rds On (Max) @ Id, Vgs 1.4Ohm @ 500mA, 4V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 3 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 900mW (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-92MOD
• Package / Case TO-226-3, TO-92-3 Long Body, Formed Leads
• RoHS Status ROHS3 Compliant
• ECCN EAR99
• HTSUS 8541.21.0095