技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 12A (Ta)
• Rds On (Max) @ Id, Vgs 8.6mOhm @ 6A, 4.5V
• Vgs(th) (Max) @ Id 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 27 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds 2020 pF @ 10 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-TSSOP
• Package / Case 8-TSSOP (0.173", 4.40mm Width)
• RoHS Status Not applicable
• ECCN EAR99
• HTSUS 8541.29.0095