技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 55 V
• Current - Continuous Drain (Id) @ 25°C 35A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 13mOhm @ 19A, 10V
• Vgs(th) (Max) @ Id 2V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 2660 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 170W (Tc)
• Operating Temperature -40°C ~ 175°C (TJ)
• Grade Automotive
• Qualification AEC-Q100
• Mounting Type Surface Mount
• Supplier Device Package PG-TO263-5-2
• Package / Case TO-263-5, D2PAK (4 Leads + Tab), TO-263BB
• RoHS Status Not applicable
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 8541.29.0095