技术参数

• Part Status Active
• Transistor Type NPN
• Current - Collector (Ic) (Max) 200 mA
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max) 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 2mA, 1V
• Power - Max 350 mW
• Frequency - Transition 250MHz
• Operating Temperature -55°C ~ 150°C (TJ)
• Mounting Type Through Hole
• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package TO-92
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 8541.21.0075