技术参数

• Part Status Obsolete
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 50 V
• Current - Continuous Drain (Id) @ 25°C 150mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
• Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 0.35 nC @ 5 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 36 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 260mW (Ta), 830mW (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package SC-70
• Package / Case SC-70, SOT-323
• RoHS Status Not applicable
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 8541.21.0095