技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 600mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
• Rds On (Max) @ Id, Vgs 620mOhm @ 600mA, 4.5V
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V
• Vgs (Max) ±8V
• Input Capacitance (Ciss) (Max) @ Vds 21.3 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 360mW (Ta), 2.7W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package DFN1006B-3
• Package / Case SC-101, SOT-883
• RoHS Status Not applicable
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 8541.21.0095