技术参数

• Part Status Active
• FET Type N-Channel
• Technology SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss) 1200 V
• Current - Continuous Drain (Id) @ 25°C 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) -
• Rds On (Max) @ Id, Vgs -
• Vgs(th) (Max) @ Id 5.6V @ 50mA
• Vgs (Max) +22V, -4V
• Input Capacitance (Ciss) (Max) @ Vds 9000 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 880W (Tc)
• Operating Temperature -40°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Chassis Mount
• Supplier Device Package Module
• Package / Case Module
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095