技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 5V
• Rds On (Max) @ Id, Vgs 22mOhm @ 45A, 5V
• Vgs(th) (Max) @ Id 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
• Vgs (Max) ±10V
• Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 15 V
• FET Feature -
• Power Dissipation (Max) 90W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-262 (I2PAK)
• Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• ECCN EAR99
• HTSUS 0000.00.0000