技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 50A (Ta)
• Rds On (Max) @ Id, Vgs 2.5mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 34 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 5100 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 55W (Tc)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-WPAK
• Package / Case 8-PowerWDFN
• RoHS Status Not applicable
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 8541.29.0095