技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 60 V
• Current - Continuous Drain (Id) @ 25°C 9A (Ta)
• Rds On (Max) @ Id, Vgs 26mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 10 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 8-PSOP
• Package / Case 8-SOIC (0.173", 4.40mm Width)
• RoHS Status Not applicable
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 0000.00.0000