技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 400 V
• Current - Continuous Drain (Id) @ 25°C 2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 1.8Ohm @ 1.25A, 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 20W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade Military
• Qualification MIL-PRF-19500/555M
• Mounting Type Through Hole
• Supplier Device Package TO-205AF (TO-39)
• Package / Case TO-205AF Metal Can
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 8541.29.0095