技术参数

• Part Status Active
• FET Type P-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 4.4A (Ta)
• Rds On (Max) @ Id, Vgs 65mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id -
• Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 750 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 1.05W (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package 6-TSOP
• Package / Case SOT-23-6 Thin, TSOT-23-6
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 0000.00.0000