技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 150 V
• Current - Continuous Drain (Id) @ 25°C 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
• Rds On (Max) @ Id, Vgs 530mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id 2V @ 1mA
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 2420 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 25W (Tc)
• Operating Temperature -55°C ~ 150°C
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package TO-220FN
• Package / Case TO-220-3 Full Pack
• RoHS Status Not applicable
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 0000.00.0000