技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 200 V
• Current - Continuous Drain (Id) @ 25°C 18A (Tc)
• Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 1275 pF @ 25 V
• FET Feature -
• Power Dissipation (Max) 125W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package TO-263AB
• Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• RoHS Status RoHS non-compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• ECCN EAR99
• HTSUS 8541.29.0095