技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 2.8mOhm @ 55A, 10V
• Vgs(th) (Max) @ Id 2V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs 59 nC @ 5 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 7624 pF @ 15 V
• FET Feature -
• Power Dissipation (Max) 150W (Tc)
• Operating Temperature -55°C ~ 175°C (TJ)
• Mounting Type Surface Mount
• Supplier Device Package PG-TO263-3-2
• Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• RoHS Status Not applicable
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• ECCN EAR99
• HTSUS 8542.39.0001