技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 250 V
• Current - Continuous Drain (Id) @ 25°C 9A (Tc)
• Rds On (Max) @ Id, Vgs 580mOhm @ 4.5A, 10V
• Vgs(th) (Max) @ Id 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 450 pF @ 10 V
• FET Feature -
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package TO-252 (MP-3Z)
• Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
• ECCN EAR99
• HTSUS 8541.29.0095