技术参数

• Part Status Obsolete
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 30 V
• Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Rds On (Max) @ Id, Vgs 50mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id -
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 1.25W (Ta)
• Operating Temperature 150°C
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Supplier Device Package SC-96-3, Thin Mini Mold
• Package / Case SC-96
• ECCN EAR99
• HTSUS 8542.39.0001