技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 600 V
• Current - Continuous Drain (Id) @ 25°C 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Rds On (Max) @ Id, Vgs 250mOhm @ 7.8A, 10V
• Vgs(th) (Max) @ Id 3.5V @ 520µA
• Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
• Vgs (Max) ±20V
• Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 100 V
• FET Feature -
• Power Dissipation (Max) 104W (Tc)
• Operating Temperature -55°C ~ 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Through Hole
• Supplier Device Package PG-TO262
• Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
• ECCN EAR99
• HTSUS 8542.39.0001