技术参数

• Part Status Active
• FET Type N-Channel
• Technology MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss) 20 V
• Current - Continuous Drain (Id) @ 25°C 1A (Ta)
• Rds On (Max) @ Id, Vgs 470mOhm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id 1V @ 1mA
• Vgs (Max) ±8V
• Input Capacitance (Ciss) (Max) @ Vds 40 pF @ 10 V
• FET Feature -
• Power Dissipation (Max) 1W
• Operating Temperature 150°C (TJ)
• Grade Automotive
• Qualification AEC-Q101
• Mounting Type Surface Mount
• Supplier Device Package DFN1010-3W
• Package / Case 3-XFDFN
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.29.0095