技术参数

• Part Status Active
• Transistor Type 2 NPN (Dual)
• Current - Collector (Ic) (Max) 30mA
• Voltage - Collector Emitter Breakdown (Max) 60V
• Vce Saturation (Max) @ Ib, Ic 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max) 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
• Power - Max 350mW
• Frequency - Transition -
• Operating Temperature 200°C (TJ)
• Mounting Type Surface Mount
• Package / Case 6-SMD, No Lead
• Supplier Device Package U
• RoHS Status ROHS3 Compliant
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095